K3510
Description
The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
- Low Ciss: Ciss = 8500 pF TYP
The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications.