K3511
Description
The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
- Low Ciss: Ciss = 5900 pF TYP
- Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB)