Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low total gate charge QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK4213-ZK-E1-AY 2SK4213-ZK-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
PACKAGE TO-252 (MP-3ZK) typ. 0.
K4213 Datasheet
