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KGF20N05D - N-Channel 5.5V Dual Power MOSFET

General Description

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2.

Key Features

  • Industry leading figures of merit: rDS(ON) × Qg and rDS(ON) × Qgd.
  • Low profile/small footprint chip-scale WLCSP package.
  • High frequency switching.
  • Known Good FET (KGF) quality assurance process.
  • Low thermal resistance.

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Datasheet Details

Part number KGF20N05D
Manufacturer Renesas
File Size 503.22 KB
Description N-Channel 5.5V Dual Power MOSFET
Datasheet download datasheet KGF20N05D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET KGF20N05D N-Channel 5.5V Dual Power MOSFET The KGF20N05D is a dual 5.5V, 1.6mΩ, chip-scale, N-channel power MOSFET. The device uses technology that uniquely integrates low cost CMOS and WLCSP fabrication processes. The chip-scale package offers small area, low vertical profile, and is fully compatible with standard SMT assembly processes. The KGF20N05D offers unprecedented low ON-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other power management systems. FN8963 Rev.0.