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M1016204 Datasheet PDF

Renesas Electronics M1016204

Serial MRAM Memory

Part No. M1016204
Datasheet M1016204 Download
Manufacturer
Renesas Electronics
Description Serial MRAM Memory
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M1016204 datasheet page 1 preview

DESCRIPTION

Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C. MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, infinite endurance and scalable non-volatile memory technology. Mxxxx204 is available in small footprint 8-pad DFN (WSON) and 8pin SOIC packages. These packages are compatible with similar low-power volatile and non-volatile products. Mxxxx204 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges. Typical

APPLICATIONS

● Ideal for applications that must store and retrieve data without incurring large latency penalties.
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