Renesas Electronics M3004204
Serial MRAM Memory
DESCRIPTION
Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C. MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, infinite endurance and scalable non-volatile memory technology. Mxxxx204 is available in small footprint 8-pad DFN (WSON) and 8pin SOIC packages. These packages are compatible with similar low-power volatile and non-volatile products. Mxxxx204 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges. TypicalAPPLICATIONS
● Ideal for applications that must store and retrieve data without incurring large latency penalties.