M6MGB331S4BKT
Description
The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- µMCP) that.
Key Features
- 3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T331S4BKT is suitable for the application of the mobile-communication-system to reduce both the mount space and weight.
