N0413N Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
N0413N Key Features
- Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)
- Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
- High current ID(DC) = ±100 A
- RoHS pliant