Renesas Electronics N0413N
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | N0413N |
|---|---|
| Datasheet | N0413N Download |
| Manufacturer |  Renesas Electronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)● Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
● High current ID(DC) = ±100 A
● RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) Tape Packing N0413N-ZK-E2-AY ∗1 800 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263 1.39 g TYP.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 40 ±20 ±100 ±400 119 1.5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 1.05 83.3 °C/W °C/W Notes: ∗1.
