Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A).
- Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V).
- High current ID(DC) = ±100 A.
- RoHS Compliant
Ordering Information
Part No. N0413N-ZK-E1-AY ∗1
Lead Plating Pure Sn (Tin)
Tape
Packing
N0413N-ZK-E2-AY ∗1
800 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. )
Package TO-263 1.39 g TYP. Absolute Maximum Ratings (TA = 25°C, all te.
N0413N Datasheet
