Datasheet4U Logo Datasheet4U.com

N0413N - N-channel MOSFET

General Description

The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current ID(DC) = ±100 A.
  • RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) Tape Packing N0413N-ZK-E2-AY ∗1 800 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Package TO-263 1.39 g TYP. Absolute Maximum Ratings (TA = 25°C, all te.

📥 Download Datasheet

Datasheet Details

Part number N0413N
Manufacturer Renesas
File Size 204.06 KB
Description N-channel MOSFET
Datasheet download datasheet N0413N Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
N0416SC020 Phase Control Thyristor Stud IXYS
N0416SC040 Phase Control Thyristor IXYS
N0416SC080 Phase Control Thyristor Stud IXYS
N0416SC080 Phase Control Thyristor IXYS
N0416SD020 Phase Control Thyristor Stud IXYS

Other Datasheets by Renesas

Part Number Description
N0412N N-Channel MOSFET
N0434N N-channel MOSFET
N0439N N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N0413N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) Tape Packing N0413N-ZK-E2-AY ∗1 800 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263 1.39 g TYP.