Renesas Electronics N0434N
N-channel MOSFET
FEATURES
● Low on-state resistance : RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)● Low Ciss : Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
● High current : ID(DC) = ±100 A
● RoHS Compliant
● Quality Grade : Standard
●
APPLICATIONS
: For high current switching Ordering Information Part No. N0434N-S23-AY Package TO-262, Pb-free Note1 Packing 50 pcs / Magazine (Tube) Note: 1. Pb-free means that this product does not contain lead in the external electrode.ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±100 A Drain Current (pulse) Note2 ID(pulse) ±400 A Total Power Dissipation (TC = 25°C) PT1 119 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note3 IAS 55 A Single Avalanche Energy Note3 EAS 300 mJ Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings.