N0600N
N0600N is MOS FIELD EFFECT TRANSISTOR manufactured by Renesas.
Preliminary Data Sheet
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
- Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/tube Package Isolated TO-220 typ. 2.2 g
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other...
