N0600N
Overview
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
- Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
- Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
