NDL3321ST - 650nm AlGaInP MQW VISIBLE LASER DIODE

Renesas

General Description

DVD-ROM.

c temperature range.

Key Features

d.
Optical output power.
Low threshold current o.
Low operating current Pr.
Low operating voltage Po = 5.0 mW Ith = 45 mA TYP. Iop = 60 mA TYP. Vop = 2.2 V TYP.
Wide operating temperature range.
Peak emission wavelength.
Fundamental transverse mode TC =.
10 to +70 °C λp = 650 nm TYP.

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NDL3321ST 650nm algainp mqw visible laser diode by Renesas - Datasheet Preview

Datasheet Details

Part number	NDL3321ST
Manufacturer	Renesas
File Size	102.33 KB
Description	650nm AlGaInP MQW VISIBLE LASER DIODE
Datasheet	NDL3321ST Datasheet

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NDL3321SU	650nm AlGaInP MQW VISIBLE LASER DIODE

Full PDF Text Transcription (Reference)

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DATA SHEET VISIBLE LASER DIODE NDL3321ST,NDL3321SU 5 mW, 650 nm AlGaInP MQW VISIBLE LASER DIODE FOR DVD, DVD-ROM APPLICATIONS DESCRIPTION t The NDL3321ST and NDL3321SU are AlGaInP 650 nm visible laser diodes and especially developed for DVD, DVD-ROM. The newly developed Multiple Quantum Well (MQW) LD chip, can achieve low operating current, wide c temperature range. Use of a CD package allows easy replacement of conventional 780 nm LDs. u FEATURES d • Optical output power • Low threshold current o • Low operating current Pr • Low operating voltage Po = 5.0 mW Ith = 45 mA TYP. Iop = 60 mA TYP. Vop = 2.2 V TYP. • Wide operating temperature range • Peak emission wavelength • Fundamental transverse mode TC = –10 to +70 °C λp = 650 nm TYP.