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NE202930 - Silicon NPN Epitaxial High Frequency Transistor

General Description

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Key Features

  • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz.

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Datasheet Details

Part number NE202930
Manufacturer Renesas
File Size 230.92 KB
Description Silicon NPN Epitaxial High Frequency Transistor
Datasheet download datasheet NE202930 Datasheet

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PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz applications R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digital-TV OUTLINE RENESAS Package code: 30 (Package name: 3-pin super minimold (30 PKG)) 1. Emitter 2. Base 3.