NE202930 - Silicon NPN Epitaxial High Frequency Transistor

Description

Rev.

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Features

High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz.

Renesas

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Datasheet Details

Part number	NE202930
Manufacturer	Renesas
File Size	230.92 KB
Description	Silicon NPN Epitaxial High Frequency Transistor
Datasheet	NE202930 Datasheet
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PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz applications R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digital-TV OUTLINE RENESAS Package code: 30 (Package name: 3-pin super minimold (30 PKG)) 1. Emitter 2. Base 3.

Published: Apr 22, 2014 |