NE55410GR Description
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of...
NE55410GR Key Features
- Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
- Over 25 dB gain available by connecting two FET’s in series
- High drain efficiency
- Low intermodulation distortion
- Single Supply (VDS : 3 V < VDS ≤ 32 V)
- Excellent Thermal Stability
- Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
- Integrated ESD protection
- Excellent stability against HCI (Hot Carrier Injection)
- Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc