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NE76000 - N-CHANNEL GaAs MESFET

Features

  • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz.
  • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz.
  • Gate length: Lg = 0.3 Pm.
  • Gate width: Wg = 280 Pm.

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Datasheet preview – NE76000

Datasheet Details

Part number NE76000
Manufacturer Renesas Electronics
File Size 110.06 KB
Description N-CHANNEL GaAs MESFET
Datasheet download datasheet NE76000 Datasheet
Additional preview pages of the NE76000 datasheet.

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    Full PDF Text Transcription

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    DATA SHEET GaAs MES FET NE76000 42 55 25 62 200 330 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 Pm • Gate width: Wg = 280 Pm ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) 119 33 t CHIP DIMENSIONS (Unit: Pm) uc 450 57 Prod DRAIN DRAIN Drain to Source Voltage VDS 5.0 Gate to Source Voltage VGS ð3.0 Gate to Drain Voltage VGD ð5.0 d Drain Current ID IDSS e Total Power Dissipation Ptot 500*1 Channel Temperature Tch 175 u Storage Temperature Tstg ð65 to +175 Thermal Resistance Rth(c-a) 190 in *1 : TA = 100 qC Ptot for chip mounted on a copper heat sink.
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