NE76000 Description
DATA SHEET GaAs MES FET NE76000 42 55 25 62 200 330 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET.
NE76000 Key Features
- Low noise figure
- High associated gain Ga = 9.0 dB TYP. at f = 12 GHz
- Gate length: Lg = 0.3 Pm
- Gate width: Wg = 280 Pm