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NP100N04NUJ Datasheet Mos Field Effect Transistor

Manufacturer: Renesas

Overview: NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.1.

General Description

The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current rating: ID(DC) = ±100 A.
  • Designed for automotive.

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NP100N04NUJ Distributor