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NP100N04NUJ - MOS FIELD EFFECT TRANSISTOR

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Renesas

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NP100N04NUJ MOS FIELD EFFECT TRANSISTOR by Renesas - Datasheet Preview — Datasheet preview – NP100N04NUJ

Datasheet Details

Part number	NP100N04NUJ
Manufacturer	Renesas
File Size	211.19 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP100N04NUJ Datasheet
Additional preview pages of the NP100N04NUJ datasheet.

Product details

Description

The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A).
Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V).
High current rating: ID(DC) = ±100 A.
Designed for automotive.

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Published: May 15, 2016 |