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NP100N04NUJ - MOS FIELD EFFECT TRANSISTOR

General Description

The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current rating: ID(DC) = ±100 A.
  • Designed for automotive.

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Datasheet Details

Part number NP100N04NUJ
Manufacturer Renesas
File Size 211.19 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP100N04NUJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID(DC) = ±100 A • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP100N04NUJ–S18-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-262 (MP-25SK) TYP. 1.