NP100N04NUJ
NP100N04NUJ is MOS FIELD EFFECT TRANSISTOR manufactured by Renesas.
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
- Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
- High current rating: ID(DC) = ±100 A
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP100N04NUJ- S18-AY ∗1
Lead Plating Pure Sn (Tin)
Packing Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package TO-262 (MP-25SK) TYP....
