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NP109N055PUK - MOS FIELD EFFECT TRANSISTOR

General Description

The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A).
  • Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet NP109N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0590EJ0100 Rev.1.00 Dec 12, 2011 Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.