NP110N055PUJ Overview
Key Specifications
Pins: 3
Height: 4.9 mm
Length: 10 mm
Width: 9 mm
Description
The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)
- Low input capacitance Ciss = 9500 pF TYP
- Designed for automotive application and AEC-Q101 qualified (TO-263)
