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NP160N055TUK - MOS FIELD EFFECT TRANSISTOR

General Description

The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A).
  • Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription for NP160N055TUK (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP160N055TUK. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Data Sheet NP160N055TUK MOS FIELD EFFECT TRANSISTOR R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 Description The NP160N055TUK is N-channel MOS Field Effect Transisto...

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1 Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.

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