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NP16N04YUG - MOS FIELD EFFECT TRANSISTOR

General Description

The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A).
  • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Designed for automotive.

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Datasheet Details

Part number NP16N04YUG
Manufacturer Renesas
File Size 213.42 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP16N04YUG Datasheet

Full PDF Text Transcription for NP16N04YUG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP16N04YUG. For precise diagrams, and layout, please refer to the original PDF.

NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Description The NP16N04YUG is N-channel MOS Field Effect Transistor de...

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Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP16N04YUG-E1-AY ∗1 NP16N04YUG-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.

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