NP180N04TUJ Description
The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
NP180N04TUJ Key Features
- Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
- Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified