Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Channel temperature 175 degree rated.
- Super low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A) RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A).
- Low input capacitance Ciss = 1300 pF TYP.
- Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all produ.
NP40N055ELE Datasheet
