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NP48N055ELE - MOS FIELD EFFECT TRANSISTOR

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) RDS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A).
  • Low input capacitance Ciss = 1970 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all product.

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Datasheet Details

Part number NP48N055ELE
Manufacturer Renesas
File Size 232.75 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP48N055ELE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055ELE, NP48N055KLE NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP48N055ELE-E1-AY Note1, 2 NP48N055ELE-E2-AY Note1, 2 NP48N055KLE-E1-AY Note1 NP48N055KLE-E2-AY Note1 NP48N055CLE-S12-AZ Note1, 2 NP48N055DLE-S12-AY Note1, 2 NP48N055MLE-S18-AY Note1 NP48N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.