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NP55N055SDG - MOS FIELD EFFECT TRANSISTOR

Description

The NP55N055SDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A).
  • Low Ciss: Ciss = 3200 pF TYP.
  • Logic level drive type (TO-252).

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Datasheet Details

Part number NP55N055SDG
Manufacturer Renesas
File Size 195.42 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP55N055SDG Datasheet
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N055SDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N055SDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SDG TO-252 (MP-3ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low Ciss: Ciss = 3200 pF TYP. • Logic level drive type (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT1 77 PT2 1.
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