NP60N055MUK Datasheet | Renesas

Preliminary Data Sheet NP60N055MUK, NP60N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0598EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features - Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A) - Low Ciss: Ciss = 2500 p F TYP. (VDS = 25 V) - Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP60N055MUK-S18-AY - 1 NP60N055NUK-S18-AY - 1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: - 1 Pb-free (This product does not contain Pb in the external electrode) Package TO-220 (MP-25K) TO-262...