NP82N06MLG
DESCRIPTION
The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N06MLG-S18-AY Note NP82N06NLG-S18-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
FEATURES
- Logic level
- Built-in gate protection diode
- Super low on-state resistance
RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A)
- High current rating ID(DC) = ±82 A
- Low input capacitance Ciss = 5700 p F TYP.
- Designed for automotive application and AEC-Q101 qualified
(TO-220) (TO-262)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±82
±270
Total Power...
