Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Channel temperature 175 degree rated.
- Super low on-state resistance
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A).
- Low input capacitance
Ciss = 5600 pF TYP. (TO-262)
(TO-263)
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