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NP90N055NUK - MOS FIELD EFFECT TRANSISTOR

Download the NP90N055NUK datasheet PDF. This datasheet also covers the NP90N055MUK variant, as both devices belong to the same mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A).
  • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V).
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP90N055MUK-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP90N055NUK
Manufacturer Renesas
File Size 106.36 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP90N055NUK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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