PF08127B - MOS FET Power Amplifier Module

Product Overview

Renesas

Part number	PF08127B
Manufacturer	Renesas
File Size	161.25 KB
Description	MOS FET Power Amplifier Module
Datasheet	PF08127B Datasheet
Additional preview pages of the PF08127B datasheet.

All in one including output matching circuit.
Simple external circuit.
Simple power control.
High gain 3stage amplifier : 0 dBm input Typ.
Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max.
High efficiency : 55% Typ at 35.0 dBm for E-GSM 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900 Pin Arrangement.
RF-Q-8 8 7G6 5 1 2G3 4 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DC.

📁 Similar Datasheet

PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone (Hitachi Semiconductor)
PF08103B - MOS FET Power Amplifier (Hitachi Semiconductor)
PF08107B - MOS FET Power Amplifier (Hitachi Semiconductor)
PF08109B - MOS FET Power Amplifier Module (Hitachi)
PF08109B-TB - Micro Module Specifications (Samsung Electronics)
PF08134B - MOS FET Power Amplifier Module (Renesas Technology)
PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)

Other Datasheets by Renesas

Published: Oct 25, 2017 |