Renesas Electronics PF08134B
MOS FET Power Amplifier Module
| Part No. | PF08134B |
|---|---|
| Datasheet | PF08134B Download |
| Manufacturer |  Renesas Electronics |
| Description | MOS FET Power Amplifier Module |
| Buy | Stock & Price |
FEATURES
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● All in one including output matching circuit Simple external circuit Simple power control High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 8.0 × 10.0 × 1.5 mm Max High efficiency 47% Typ at 33.5 dBm for GSM850 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900 Pin Arrangement
● RF-Q-8 5 G6 8 7 4 G3 2 1 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND Rev.1.01, May 13, 2004, page 1 of 13 PF08134B
ABSOLUTE MAXIMUM RATINGS
*1 (Tc = 25°C) Item Supply voltage Supply current Vctl voltage Vapc voltage Input power Operating case temperature * Storage temperature Output power 2 Symbol Vdd Idd GSM Idd DCS Vctl Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 7.0 5.0 3.5 2 4 4 10 −30 to +100 −40 to +100 5 3 Unit V V A A V V dBm °C °C W W Remark at no-operation at operation (50 Ω load) Notes: 1. The maximum ratings shall be valid over both the GSM850-band (824 to 849 MHz), and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz).
