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PS2561DL-1 - DIP PHOTOCOUPLER

Download the PS2561DL-1 datasheet PDF. This datasheet also covers the PS2561D-1 variant, as both devices belong to the same dip photocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The PS2561D-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561D-1 is in a plastic DIP (Dual In-line Package) and the PS2561DL-1 is lead bending type (Gullwing) for surface mount.

Key Features

  • Operating ambient temperature: 110 °C.
  • High isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 160 % TYP. ).
  • High-speed switching (tr = 3 μs TYP. , tf = 5 μs TYP. ).
  • Ordering number of taping product: PS2561DL-1-F3 : 2 000 pcs/reel.
  • : PS2561DL2-1-F3 : 2 000 pcs/reel.
  • Pb-Free product.
  • Safety standards.
  • UL approved: UL1577, Doub.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PS2561D-1-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
PS2561DL-1 DIP PHOTOCOUPLER NEC
PS2561DL-1 PHOTOCOUPLER CEL
PS2561DL1-1 DIP PHOTOCOUPLER NEC
PS2561DL1-1 PHOTOCOUPLER CEL
PS2561DL2-1 DIP PHOTOCOUPLER NEC

Other Datasheets by Renesas

Part Number Description
PS2561DL1-1 DIP PHOTOCOUPLER
PS2561DL2-1 DIP PHOTOCOUPLER
PS2561D-1 DIP PHOTOCOUPLER
PS2561-1 GaAs light emitting diode and an NPN silicon phototransistor
PS2561F-1 DIP PHOTOCOUPLER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PS2561D-1, PS2561DL-1, PS2561DL1-1, PS2561DL2-1 DIP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110 °C Data Sheet R08DS0181EJ0101 Rev.1.01 Feb 21, 2022 DESCRIPTION The PS2561D-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561D-1 is in a plastic DIP (Dual In-line Package) and the PS2561DL-1 is lead bending type (Gullwing) for surface mount. The PS2561DL1-1 is lead bending type for long creepage distance. The PS2561DL2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount. FEATURES • Operating ambient temperature: 110 °C • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 160 % TYP.