PS2561L-1 - GaAs light emitting diode and an NPN silicon phototransistor

Product Overview

Renesas

Part number	PS2561L-1
Manufacturer	Renesas
File Size	5.11 MB
Description	GaAs light emitting diode and an NPN silicon phototransistor
Datasheet	PS2561L-1 Datasheet
Note	This datasheet PDF includes multiple part numbers: PS2561L-1, PS2561-1. Please refer to the document for exact specifications by model.
Additional preview pages of the PS2561L-1 datasheet.

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount.

The PS2561L1-1 is wide lead bending type.

High isolation voltage (BV = 5 000 Vr. m. s. ).
High collector to emitter voltage (VCEO = 80 V).
High current transfer ratio (CTR = 200% TYP. ).
High-speed switching (tr = 3 s TYP. , tf = 5 s TYP. ).
Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-F3 : 2 000 pcs/reel.
Pb-Free product.
Safety standards.
UL approved: UL1577, Double protection.
CSA approved: CAN/CSA-C22.2 No. 62368-1, Reinforced insulation.
BSI approved: B.

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Published: Oct 12, 2024 |