PS2561L2-1 Datasheet Gaas Light Emitting Diode And An NPN Silicon Phototransistor

Manufacturer: Renesas

Overview: PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE Data Sheet R08DS0207EJ0100 Rev.1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PS2561L2-1
Manufacturer	Renesas
File Size	5.11 MB
Description	GaAs light emitting diode and an NPN silicon phototransistor
Datasheet	PS2561L2-1 PS2561-1 Datasheet (PDF)

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount.

The PS2561L1-1 is wide lead bending type.

High isolation voltage (BV = 5 000 Vr. m. s. ).
High collector to emitter voltage (VCEO = 80 V).
High current transfer ratio (CTR = 200% TYP. ).
High-speed switching (tr = 3 s TYP. , tf = 5 s TYP. ).
Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-F3 : 2 000 pcs/reel.
Pb-Free product.
Safety standards.
UL approved: UL1577, Double protection.
CSA approved: CAN/CSA-C22.2 No. 62368-1, Reinforced insulation.
BSI approved: B.

Brand Logo	Part Number	Description	Manufacturer
	PS2561L2-1	HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES	NEC
	PS2561L2-1	PHOTOCOUPLER	CEL

Part Number	Description
PS2561L-1	GaAs light emitting diode and an NPN silicon phototransistor
PS2561L1-1	GaAs light emitting diode and an NPN silicon phototransistor
PS2561-1	GaAs light emitting diode and an NPN silicon phototransistor
PS2561D-1	DIP PHOTOCOUPLER
PS2561DL-1	DIP PHOTOCOUPLER
PS2561DL1-1	DIP PHOTOCOUPLER
PS2561DL2-1	DIP PHOTOCOUPLER
PS2561F-1	DIP PHOTOCOUPLER
PS2561FL-1	DIP PHOTOCOUPLER
PS2565-1	MULTI PHOTOCOUPLER