R1EX24512BSAS0A Datasheet PDF - Renesas 512k EEPROM Specs

R1EX24512BSAS0A - 512k EEPROM

Datasheet Summary

Description

R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).

They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology.

Features

Single supply: 1.8 V to 5.5 V.
Two-wire serial interface (I2C serial bus).
Clock frequency: 1 MHz (2.5 V to 5.5 V) / 400 kHz (1.8 V to 5.5 V).
Power dissipation:  Standby: 2 µA (max)  Active (Read): 1 mA (max)  Active (Write): 5 mA (max).
Automatic page write: 128-byte/page.
Write cycle time: 5 ms.
Endurance: 1,000k Cycles @25°C.
Data retention: 100 Years @25°C.
Small size packages: SOP-8pin , TSSOP 8-pin.

Datasheet Details

Part number	R1EX24512BSAS0A
Manufacturer	Renesas
File Size	750.30 KB
Description	512k EEPROM
Datasheet	R1EX24512BSAS0A Datasheet
Additional preview pages of the R1EX24512BSAS0A datasheet.

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Full PDF Text Transcription

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R1EX24512BSAS0A R1EX24512BTAS0A Two-wire serial interface 512k EEPROM (64-kword × 8-bit) Preliminary Datasheet R10DS0025EJ0001 Rev.0.01 Sep, 01, 2010 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. They also have a 128-byte page programming function to make their write operation faster. Note: Renesas Electronics’ serial EEPROM are authorized for using consumer applications such as cellular phone, camcorders, audio equipment.

Published: Apr 9, 2016 |