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R1LV0408CSP-5SI - Wide Temperature Range Version 4M SRAM

General Description

The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit.

R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Key Features

  • Single 3 V supply: 2.7 V to 3.6 V.
  • Access time: 55/70 ns (max).
  • Power dissipation:  Active: 6 mW/MHz (typ)  Standby: 1.5 µW (typ).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Directly TTL compatible.  All inputs and outputs.
  • Battery backup operation.
  • Operating temperature:.
  • 40 to +85°C Rev.2.00, May.

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R1LV0408C-I Series Wide Temperature Range Version 4M SRAM (512-kword × 8-bit) REJ03C0098-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin STSOP. Features • Single 3 V supply: 2.7 V to 3.6 V • Access time: 55/70 ns (max) • Power dissipation:  Active: 6 mW/MHz (typ)  Standby: 1.5 µW (typ) • Completely static memory.