R1Q6A7236ABG
Description
The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter.
Key Features
- 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock
- Fast clock cycle time for high bandwidth
- Two input clocks (K and /K) for precise DDR timing at clock rising edges only
- Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches
- Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
- Clock-stop capability with μs restart ႑ I/O
- Separate independent read and write data ports
- DDR read or write operation initiated each cycle
- HSTL I/O
- User programmable output impedance
