R1QBA3618CBG
Description
The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
# = B: Latency =2.5, w/o ODT # = E: Latency =2.5, w/ ODT
# = H: Latency =2.0, w/o ODT # = L: Latency =2.0, w/ ODT
Features
႑ Power Supply
- 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
႑ Clock
- Fast clock cycle time for high bandwidth
- Two input clocks (K and /K) for precise DDR timing at clock rising edges only
- Two output echo clocks (CQ and /CQ)...
