R1QBA3636CBG
Description
The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
Key Features
- ႑ Power Supply
- 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock
- Fast clock cycle time for high bandwidth
- Two input clocks (K and /K) for precise DDR timing at clock rising edges only
- Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
- Clock-stop capability with Ps restart ႑ I/O
- Pipelined double data rate operation
- User programmable output impedance
- DLL/PLL circuitry for wide output data valid window and future frequency scaling
- Data valid pin (QVLD) to indicate valid data on the output ႑ Function
