R1QLA4436RBG
Description
The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter.
Key Features
- Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
- Clock z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart
- I/O z z z z z z Common data input/output bus Pipelined double data rate operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and future frequency scaling Data valid pin (QVLD) to indicate valid data on the output
- Function z Two-tick burst for low DDR transaction size z Internally self-timed write control z Simple control logic for easy depth expansion z JTAG 1149.1 compatible test access port
- Package z 165 FBGA package (15 x 17 x 1.4 mm)
