RAJ240047
Overview
- Flash ROM: 128KB
- Data flash: 4 KB Internal SRAM: 5.5 KB Current integrating circuit (18-bit ΔΣA/D) 15-bit ΔΣA/D converter (external 3 channels, internal 5 channels including simple temperature sensor) High side N-ch FET control circuit for charge and discharge current protection Overcurrent detection circuit (discharge short-circuit current (2 channels), charge/discharge overcurrent, and wake-up current) Battery voltage detection circuit (4 cells) Battery cell conditioning circuit (4 cells) Pack+ terminal voltage detection circuit FUSE control circuit MCU built-in high speed on-chip clock generator AFE on-chip oscillator clock (4.194 MHz) MCU runaway detection circuit MCU build-in watchdog timer Series regulator (VREG2: 3.3 V, VREG1: 1.8 V) Reset circuit (VREG2, VREG1 monitoring) High speed on-chip clock oscillator
- High speed operation :1 to 32 MHz
- Low speed operation :1 to 8 MHz I/O port: 12
- CMOS input/output: 6
- CMOS input: 2
- N-ch open drain: 2
- High voltage input: 1
- High voltage output: 1 Serial interface:
- Simplified I2C MCU 16-bit timer: 5 channels MCU 12-bit interval timer: 1 channel AFE timer (setting range: 125 ms to 64 s) 8 bits PWM signal generator Intel® Dynamic Battery Power Technology support Impedance measurement circuit Built-in on-chip debug function Self programming function support Power supply voltage: VCC = 4.0 to 25 V Operation ambient temperature: Ta = -20 to +85°C
