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RAJ240100 - Li-ion Battery Manager

Download the RAJ240100 datasheet PDF. This datasheet also covers the RAJ240090 variant, as both devices belong to the same li-ion battery manager family and are provided as variant models within a single manufacturer datasheet.

General Description

RAJ240090 / RAJ240100 are Renesas Li-ion battery fuel gauge IC (FGIC) which consist of a MCU device and an AFE device in a single package.

Key Features

  • Fully integrated battery management solution with battery capacity measurement and programmable protection capability.
  • Supports up to 10 Li-ion or Li-Polymer battery cells in series. RAJ240090 supports 3 to 8 series cells, RAJ240100 supports 3 to 10 series cells.
  • Integrated with Renesas Ultra Low Power RL78 CPU core for multi-function process.
  • Memory Code flash memory: 128 kB Data flash memory (up to 100,000 erase/write cycles): 4 kB SRAM: 7 kB.
  • Clock generator High.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RAJ240090-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RAJ240100
Manufacturer Renesas
File Size 3.33 MB
Description Li-ion Battery Manager
Datasheet download datasheet RAJ240100 Datasheet

Full PDF Text Transcription for RAJ240100 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RAJ240100. For precise diagrams, and layout, please refer to the original PDF.

RAJ240090 / RAJ240100 3 to 8 / 10 Series Li-ion Battery Manager 1. INTRODUCTION 1.1 Features ◼ Fully integrated battery management solution with battery capacity measurem...

View more extracted text
integrated battery management solution with battery capacity measurement and programmable protection capability. ◼ Supports up to 10 Li-ion or Li-Polymer battery cells in series. RAJ240090 supports 3 to 8 series cells, RAJ240100 supports 3 to 10 series cells. ◼ Integrated with Renesas Ultra Low Power RL78 CPU core for multi-function process. ◼ Memory Code flash memory: 128 kB Data flash memory (up to 100,000 erase/write cycles): 4 kB SRAM: 7 kB ◼ Clock generator High speed on-chip oscillator: up to 32 MHz Low speed on-chip oscillator: 32 kHz AFE high speed on-chip oscillator: 4.194 MHz AFE low speed on-chip oscillator: 13

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