RAJ2930004AGM Overview
The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (mon Mode Transient Immunity) performance over 150 V/ns, providing reliable munication and increased noise...
RAJ2930004AGM Key Features
- On-chip Micro Isolator (isolated circuit)
- High voltage isolation: 3750Vrms, 1min
- High CMTI (mon Mode Transient Immunity): over 150V/ns
- High output gate drive circuit
- Gate drive output peak current (Source / Sink): 10A typ. / 10A typ
- On-chip active miller clamp
- Soft turn-off function
- Various on-chip protection circuits
- Over current detection by DESAT (Desaturation Protection): 8.9V typ
- On-chip under voltage lockout circuit (UVLO) VCC1 (5 V system): 4.1V typ. VCC2 (15 V system): 10V typ
RAJ2930004AGM Applications
- 40 to 125 °C (Junction temperature: 150 °C max) ⚫ AEC-Q100 Qualified (Grade 1)