RBA130N10EANS-4UA04
Description
The RBA130N10EANS-4UA04 N-channel power MOSFET features
REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra pact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Features
- Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V
- Super low on-state resistance: RDS(on) = 3.7 m Max.
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- AEC-Q101 qualified, PPAP capable
- Pb-free lead plating: Ro HS pliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Application
DC/DC onboard charging, Zone ECUs, Motor control, Battery management system, Wireless charging modules, Camera/Sensor power supply, Thermal Module Driver, LED Lighting
Outline
4 1
8 5
1 4 SO8-FL (5×6)
Drain 5 to...
