RBA160N04AHPF-4UA01
Description
The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A )
- Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V )
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
