RBA200N15YANS-3UA03
Description
The RBA200N15YANS-3UA03 N-channel power MOSFET features
REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features top-side cooling for ultra-pact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Features
- Standard level gate drive voltage: VGS(th) = 2.2 to 3.7 V
- Super low on-state resistance: RDS(on) = 3.4 m MAX.
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- AEC-Q101 qualified
- PPAP capable
- Pb-free lead plating: Ro HS pliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Application
Small Traction (2-wheel, 3-wheel vehicle), 72 to 96 V load, Onboard charger, Charging station, Low voltage DC/DC,
Outline
9 8
9 1
TOLL
Drain 9
Gate 1
Source 2 to 8
Equivalent circuit
A200N15
YUA Mark part number
Lot number Trace code
Marking Specification
Absolute...
