RBE015N10R1SZPV
Description
The RBE015N10R1SZPV N-channel power MOSFET features
REXFET-1 split-gate technology and is offered in a TOLG package. The TOLG package has a similar profile and footprint to the TOLL package, but with the benefits of gullwing leads for high thermal cycling capability. Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Features
- Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V
- Super low on-state resistance: RDS(on) = 1.5 m Max.
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- Pb-free lead plating: Ro HS pliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Application
Motor Control, Energy Infrastructure, Industrial Automation, DC-DC Power Conversion, Power Tools, Robotics
Outline
9 8
9 1
8 TOLG
Drain 9
Gate 1 Source 2 to 8 Equivalent Circuit
E015N10 R1S
Lot number
Trace code
Data Matrix Mark...
