RBE029N10R1SZN6 Description
The RBE029N10R1SZN6 N-channel power MOSFET.
RBE029N10R1SZN6 Applications
- Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V
- Part: RBE029N10R1SZN6
- Manufacturer: Renesas
- Size: 353.60 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RBE015N10R1SZPV | 100V 340A N-Channel Power MOSFET |
| RBE015N10R1SZQ4 | 100V 340A N-Channel Power MOSFET |
| RBE039N15R1SZPW | 150V 190A N-Channel Power MOSFET |
| RBE039N15R1SZQ4 | 150V 190A N-Channel Power MOSFET |