RBE029N10R1SZN6
Description
The RBE029N10R1SZN6 N-channel power MOSFET features
REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra pact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Features
- Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V
- Super low on-state resistance: RDS(on) = 2.9 m Max.
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- Pb-free lead plating: Ro HS pliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Application
Motor Control, Energy Infrastructure, Industrial Automation, DC-DC Power Conversion, Power, Tools, Robotics
Outline
4 1
8 5
1 4 SO8-FL (5×6)
Drain 5 to 8
Gate 4 Source 1 to 3 Equivalent Circuit
E029N10 A
Lot number Trace code
Mark part number...
