RBE039N15R1SZPW
Description
The RBE039N15R1SZPW N-channel power MOSFET features
REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-pact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Features
- Standard level gate drive voltage: VGS(th) = 2.2 to 3.7 V
- Super low on-state resistance: RDS(on) = 3.9 m MAX.
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- Pb-free lead plating: Ro HS pliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Application
Motor Control, Energy Infrastructure, Industrial Automation, DC-DC Power Conversion, Power Tools, Robotics.
Outline
9 16
16 Heatsink
Drain 9 to 16,Heatsink
TOLT
9 Gate 8
Source 1 to 7 Equivalent circuit
E039N15
R1S
Trace code
Mark part number
Lot number
Marking Specification
Absolute Maximum...
