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RBK04U04GNS - N-Channel Power MOSFET

Key Features

  • Low on-state resistance RDS(on) = 1.2 m typ. (at VGS = 10 V, ID = 18 A).
  • Current Sensing.
  • Surface mount package.
  • Quality grade: Standard Outline.

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RBK04U04GNS 40V - 35A N-Channel Power MOSFET Applications: Li-ion battery management system Datasheet R07DS1507EJ0100 Rev.1.00 Mar.14.2022 Features  Low on-state resistance RDS(on) = 1.2 m typ. (at VGS = 10 V, ID = 18 A)  Current Sensing  Surface mount package  Quality grade: Standard Outline RENESAS Package code: PTSN0008DB-A (Package name: HSON-8pin) 8765 1234 INDEX 9(Backside Exposed pad) Drain 1 8 1. Gate 2 7 2. Source-1 3. Source-1 3 6 4. Source-1 Gate 5. Drain 4 5 6. Source-2 7. Kelvin 8. Drain 9. Drain Kelvin Source-2 Source-1 Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.