RBK04U04GNS - N-Channel Power MOSFET

Datasheet Summary

Features

Low on-state resistance RDS(on) = 1.2 m typ. (at VGS = 10 V, ID = 18 A).
Current Sensing.
Surface mount package.
Quality grade: Standard Outline.

Renesas

📥 Download Datasheet

Datasheet Details

Part number	RBK04U04GNS
Manufacturer	Renesas
File Size	231.08 KB
Description	N-Channel Power MOSFET
Datasheet	RBK04U04GNS Datasheet
Additional preview pages of the RBK04U04GNS datasheet.

📁 Similar Datasheet

RBK264A - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK264B - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK264T - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK266A - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK266B - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK266T - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK268A - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK268B - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK268T - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)
RBK2913AA - 2-Phase Stepping Motor and Microstep Driver (ORIENTAL MOTOR)

Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text

RBK04U04GNS 40V - 35A N-Channel Power MOSFET Applications: Li-ion battery management system Datasheet R07DS1507EJ0100 Rev.1.00 Mar.14.2022 Features  Low on-state resistance RDS(on) = 1.2 m typ. (at VGS = 10 V, ID = 18 A)  Current Sensing  Surface mount package  Quality grade: Standard Outline RENESAS Package code: PTSN0008DB-A (Package name: HSON-8pin) 8765 1234 INDEX 9(Backside Exposed pad) Drain 1 8 1. Gate 2 7 2. Source-1 3. Source-1 3 6 4. Source-1 Gate 5. Drain 4 5 6. Source-2 7. Kelvin 8. Drain 9. Drain Kelvin Source-2 Source-1 Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.

Published: Sep 1, 2022 |