RJF0408JPD
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.
Key Features
- Logic level operation (4 V Gate drive).
- Built-in the over temperature shut-down circuit.
- High endurance capability against to the short circuit.
- Latch type shut down operation (need 0 voltage recovery).
- Built-in the current limitation circuit.
- Power supply voltage applies 12 V.
- AEC-Q101 Compliant.
- Endurance capability against to ESD. Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit
- 1. Gate 2. Drain 3. Source 4. Drain S
