RJF0408JPD Overview
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
RJF0408JPD Key Features
- Logic level operation (4 V Gate drive)
- Built-in the over temperature shut-down circuit
- High endurance capability against to the short circuit
- Latch type shut down operation (need 0 voltage recovery)
- Built-in the current limitation circuit
- Power supply voltage applies 12 V
- AEC-Q101 pliant
- Endurance capability against to ESD