RJF0606JPE Datasheet | Renesas

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Latch type shut down operation (need 0 voltage recovery). - Built-in the current limitation circuit. - Power supply voltage applies 12 V and 24 V. - AEC-Q101 pliant Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit 2,4 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Gate to source voltage Drain current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS VGSS ID Note3 IDR IAP Note 2 EAR Note 2 Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25°C 2. Tch = 25°C, Rg ≥ 50 Ω 3. It provides by the current limitation lower bound value. Ratings 60 16 - 2.5 40 40 12 617 50...